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| VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 33 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 1200 1200 20 30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features International standard package JEDEC TO-247 AD 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity l l l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25C TJ = 125C 6 250 1 100 25N120 25N120A 3 4 V V A mA nA V V BVCES VGE(th) ICES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 250 A, VCE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Capacitor discharge systems Solid state relays l l l l l l l l l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density (c) 1996 IXYS All rights reserved 92783D (3/96) IXGH 25N120 IXGH 25N120A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 15 2750 VCE = 25 V, VGE = 0 V, f = 1 MHz 200 50 130 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES , RG = Roff = 33 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 V CES, RG = Roff = 33 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 25N120 25N120A 25N120A 25N120 25N120A 25N120A 25 55 100 250 650 700 600 11 100 250 4.2 720 1200 800 15 1000 1200 1000 800 180 50 90 S pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ 0.62 K/W 0.25 K/W 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-247 AD Outline gfs Cies Coes Cres Qg Q ge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = I C90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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